Volume 63, Number 3, August 2003
|Page(s)||433 - 439|
|Section||Condensed matter: electronic structure, electrical, magnetic, and optical properties|
|Published online||01 November 2003|
Temperature dependence of resistivity in polycrystalline manganites
Huazhong University of Science and Technology - Wuhan 430074, PRC
Accepted: 23 May 2003
Based on the thermal activation and the spin-polarized tunneling, which depend on temperature range and grain separation, the transport phenomenon is discussed for polycrystalline manganites. By averaging over the distribution of grain separation, we derive a general expression of resistivity which in form is similar to a two-component description. A quantitative agreement with the experimental data obtained in polycrystalline La2/3Ca1/3MnO3 gives a strong support to this model. Some main features dealing with the grain boundary effect in polycrystalline manganites are discussed on the basis of this model.
PACS: 73.40.-c – Electronic transport in interface structures / 72.25.-b – Spin polarized transport / 75.47.Gk – Colossal magnetoresistance
© EDP Sciences, 2003
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