Volume 63, Number 6, September 2003
|Page(s)||888 - 894|
|Section||Condensed matter: electronic structure, electrical, magnetic, and optical properties|
|Published online||01 November 2003|
Electron interaction with domain walls in antiferromagnetically coupled multilayers
Departamento de Física de la Materia Condensada, C-III Universidad Autónoma de Madrid - Madrid, Spain
2 CMIT, University of Alabama - Tuscaloosa, AL 35487, USA
3 Laboratorium voor vaste Stofffysica en Magnetisme, K.U. Leuven B-3001 Leuven, Belgium
4 Institute of Electrical Engineering-SAS - 84239 Bratislava, Slovakia
5 Max-Planck-Institut für Mikrostrukturphysik - Weinberg 2, 06120 Halle, Germany
Accepted: 4 July 2003
For antiferromagnetically coupled multilayers the low-field contribution to the resistivity , which is caused by the domain walls, is strongly enhanced at low temperatures. The low-temperature resistivity varies according to a power law, with the exponent –1. This behavior cannot be explained assuming ballistic electron transport through the domain walls. It is necessary to invoke the suppression of anti-localization effects (positive quantum correction to conductivity) by the non-uniform gauge fields caused by the domain walls.
PACS: 75.60.-d – Domain effects, magnetization curves, and hysteresis / 75.70.-i – Magnetic properties of thin films, surfaces, and interfaces / 75.47.De – Giant magnetoresistance
© EDP Sciences, 2003
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