Volume 63, Number 6, September 2003
|Page(s)||874 - 880|
|Section||Condensed matter: electronic structure, electrical, magnetic, and optical properties|
|Published online||01 November 2003|
Inverse giant magnetoresistance due to spin-dependent interface scattering in
Institut für Festkörperforschung, Forschungszentrum Jülich GmbH D-52425 Jülich, Germany
Corresponding author: email@example.com
Accepted: 10 July 2003
We have found an inverse current-in-plane giant magnetoresistance (CIP-GMR) effect in epitaxial samples grown by molecular-beam epitaxy. The and magnetic layers are decoupled, and antiparallel alignment is achieved by the different coercivities of the and layers. The inverse GMR ratio is approximately one order of magnitude smaller than i) the normal GMR ratio of or comparable epitaxial samples, and ii) the simultaneously observed anisotropic magnetoresistance (AMR). The comparison with and systems, which both show a normal GMR effect, demonstrates that the inversion of the GMR effect is solely induced by modifying the non-magnetic spacer layer. Therefore, these experiments give strong evidence that interface scattering significantly contributes to the CIP-GMR. This conclusion is further supported by an analysis in terms of interface scattering spin asymmetries.
PACS: 73.40.-c – Electronic transport in interface structures / 75.47.De – Giant magnetoresistance / 75.70.Cn – Magnetic properties of interfaces (multilayers, superlattices, heterostructures)
© EDP Sciences, 2003
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