| Issue |
Europhys. Lett.
Volume 63, Number 6, September 2003
|
|
|---|---|---|
| Page(s) | 874 - 880 | |
| Section | Condensed matter: electronic structure, electrical, magnetic, and optical properties | |
| DOI | https://doi.org/10.1209/epl/i2003-00606-0 | |
| Published online | 01 November 2003 | |
Inverse giant magnetoresistance due to spin-dependent
interface scattering in 
Institut für Festkörperforschung, Forschungszentrum Jülich GmbH D-52425 Jülich, Germany
Corresponding author: d.buergler@fz-juelich.de
Received:
9
December
2002
Accepted:
10
July
2003
We have found an inverse current-in-plane giant magnetoresistance
(CIP-GMR) effect in epitaxial samples grown by
molecular-beam epitaxy. The 
and 
magnetic
layers are decoupled, and antiparallel alignment is achieved by
the different coercivities of the and layers.
The inverse GMR ratio is approximately one order of magnitude
smaller than i) the normal GMR ratio of 
or
comparable epitaxial 
samples, and ii) the
simultaneously observed anisotropic magnetoresistance (AMR). The
comparison with and 
systems, which
both show a normal GMR effect, demonstrates that the inversion of
the GMR effect is solely induced by modifying the non-magnetic
spacer layer. Therefore, these experiments give strong evidence
that interface scattering significantly contributes to the
CIP-GMR. This conclusion is further supported by an analysis in
terms of interface scattering spin asymmetries.
PACS: 73.40.-c – Electronic transport in interface structures / 75.47.De – Giant magnetoresistance / 75.70.Cn – Magnetic properties of interfaces (multilayers, superlattices, heterostructures)
© EDP Sciences, 2003
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