| Issue |
Europhys. Lett.
Volume 68, Number 5, December 2004
|
|
|---|---|---|
| Page(s) | 685 - 691 | |
| Section | Condensed matter: electronic structure, electrical, magnetic, and optical properties | |
| DOI | https://doi.org/10.1209/epl/i2004-10252-0 | |
| Published online | 29 October 2004 | |
Kondo behavior of 
in 
1
Laboratorium für Festkörperphysik, ETH-Hönggerberg - CH-8093 Zürich, Switzerland
2
Department of Physics, University of California - Davis, CA 95616, USA
Received:
6
July
2004
Accepted:
30
September
2004
Replacing for 
in semiconducting
at the few at.% level induces metallic
behaviour and Kondo-type phenomena at low temperatures, a rather
unusual feature for impurities in metallic hosts. For
, the resistance minimum occurs at
. The subsequent characteristic logarithmic increase
of the resistivity with decreasing temperature merges into the
expected T2-dependence below 0.8. Data of the
low-temperature specific heat and the magnetization are analyzed
by employing a simple resonance-level model. Analogous
measurements on 
with a small amount of
revealed no traces of Kondo behavior, above 0.4.
PACS: 72.15.Qm – Scattering mechanisms and Kondo effect / 75.20.Hr – Local moment in compounds and alloys; Kondo effect, valence fluctuations, heavy fermions / 75.30.Mb – Valence fluctuation, Kondo lattice, and heavy-fermion phenomena
© EDP Sciences, 2004
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