Volume 68, Number 5, December 2004
|Page(s)||685 - 691|
|Section||Condensed matter: electronic structure, electrical, magnetic, and optical properties|
|Published online||29 October 2004|
Kondo behavior of in
Laboratorium für Festkörperphysik, ETH-Hönggerberg - CH-8093 Zürich, Switzerland
2 Department of Physics, University of California - Davis, CA 95616, USA
Accepted: 30 September 2004
Replacing for in semiconducting at the few at.% level induces metallic behaviour and Kondo-type phenomena at low temperatures, a rather unusual feature for impurities in metallic hosts. For , the resistance minimum occurs at . The subsequent characteristic logarithmic increase of the resistivity with decreasing temperature merges into the expected T2-dependence below 0.8. Data of the low-temperature specific heat and the magnetization are analyzed by employing a simple resonance-level model. Analogous measurements on with a small amount of revealed no traces of Kondo behavior, above 0.4.
PACS: 72.15.Qm – Scattering mechanisms and Kondo effect / 75.20.Hr – Local moment in compounds and alloys; Kondo effect, valence fluctuations, heavy fermions / 75.30.Mb – Valence fluctuation, Kondo lattice, and heavy-fermion phenomena
© EDP Sciences, 2004
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