Issue |
Europhys. Lett.
Volume 69, Number 5, March 2005
|
|
---|---|---|
Page(s) | 812 - 818 | |
Section | Condensed matter: electronic structure, electrical, magnetic, and optical properties | |
DOI | https://doi.org/10.1209/epl/i2004-10473-1 | |
Published online | 16 February 2005 |
Calculating the Curie temperature reliably in diluted III-V ferromagnetic semiconductors
1
Institut Laue Langevin - BP 156, 38042 Grenoble, France
2
Institute of Physics, Academy of Sciences of the Czech Republic Na Slovance 2, CZ-182 21 Prague 8, Czech Republic
Corresponding authors: bouzerar@ill.fr ziman@ill.fr kudrnov@fzu.cz
Received:
17
December
2004
Accepted:
14
February
2005
We present a semi-analytic theory for the Curie temperature in diluted magnetic semiconductors that treats disorder effects exactly in the effective Heisenberg Hamiltonian, and spin fluctuations within a local RPA. The exchange couplings are taken from concentration-dependent ab initio estimates. The theory gives very good agreement with published data for well-annealed samples of MnxGaAs. We predict that critical temperatures for strongly p-type MnxGaN would be lower than in doped GaAs, despite the stronger nearest-neighbour ferromagnetic coupling. We also predict the dependence on the hole concentration.
PACS: 75.50.Pp – Magnetic semiconductors / 75.47.-m – Magnetotransport phenomena; materials for magnetotransport / 71.55.Eq – III-V semiconductors
© EDP Sciences, 2005
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