Volume 69, Number 5, March 2005
|Page(s)||812 - 818|
|Section||Condensed matter: electronic structure, electrical, magnetic, and optical properties|
|Published online||16 February 2005|
Calculating the Curie temperature reliably in diluted III-V ferromagnetic semiconductors
Institut Laue Langevin - BP 156, 38042 Grenoble, France
2 Institute of Physics, Academy of Sciences of the Czech Republic Na Slovance 2, CZ-182 21 Prague 8, Czech Republic
Corresponding authors: firstname.lastname@example.org email@example.com firstname.lastname@example.org
Accepted: 14 February 2005
We present a semi-analytic theory for the Curie temperature in diluted magnetic semiconductors that treats disorder effects exactly in the effective Heisenberg Hamiltonian, and spin fluctuations within a local RPA. The exchange couplings are taken from concentration-dependent ab initio estimates. The theory gives very good agreement with published data for well-annealed samples of MnxGaAs. We predict that critical temperatures for strongly p-type MnxGaN would be lower than in doped GaAs, despite the stronger nearest-neighbour ferromagnetic coupling. We also predict the dependence on the hole concentration.
PACS: 75.50.Pp – Magnetic semiconductors / 75.47.-m – Magnetotransport phenomena; materials for magnetotransport / 71.55.Eq – III-V semiconductors
© EDP Sciences, 2005
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