| Issue |
Europhys. Lett.
Volume 71, Number 4, August 2005
|
|
|---|---|---|
| Page(s) | 524 - 529 | |
| Section | General | |
| DOI | https://doi.org/10.1209/epl/i2005-10117-0 | |
| Published online | 13 July 2005 | |
Implementing controlled-NOT gate based on free spin qubits with semiconductor quantum-dot array
1
Department of Physics, Changshu Institute of Technology - Changshu 215500, PRC
2
Center for Quantum Information Science, National Cheng Kung University Tainan 70101, Taiwan
Corresponding author: yzwu@cslg.cn
Received:
10
February
2005
Accepted:
17
June
2005
Based on electron spins in semiconductor quantum dots as qubits, a new quantum controlled-NOT (CNOT) gate is constructed in solid nanostructure without resorting to spin-spin interactions. Single-electron tunneling technology and coherent quantum-dot cellular-automaton architecture are used to generate an ancillary charge entangled state. Using the ancillary charge entangled state as an intermediate state, we obtain a spin entangled state and design a CNOT gate by using only single-spin rotations.
PACS: 03.67.Lx – Quantum computation / 73.63.-b – Electronic transport in nanoscale materials and structures
© EDP Sciences, 2005
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