Volume 71, Number 5, September 2005
|Page(s)||757 - 762|
|Section||Physics of gases, plasmas and electric discharges|
|Published online||29 July 2005|
Enhanced diffusion of in aluminium under low-energy ion bombardment
Institute “Ruder Bošković” - Zagreb, Croatia
2 Faculty of Mechanical Engineering and Naval Architecture - Zagreb, Croatia
Corresponding author: email@example.com
Accepted: 10 June 2005
Sputter deposition of copper on aluminium, under intense bombardment of low-energy ions resulted in the formation of two interfacial zones. The mean diffusion coefficient effective in the formation of the first zone, , is attributed to vacancy supersaturation. The results strongly suggest that by supplying the necessary energy for the formation of vacancies, the activation energy for diffusion can be reduced to the level of the enthalpy of migration, provided lifetimes of freely migrating defects are sufficiently long.
PACS: 52.40.Hf – Plasma-material interactions; boundary layer effects / 68.35.Fx – Diffusion; interface formation
© EDP Sciences, 2005
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