| Issue |
Europhys. Lett.
Volume 72, Number 1, October 2005
|
|
|---|---|---|
| Page(s) | 103 - 109 | |
| Section | Condensed matter: electronic structure, electrical, magnetic, and optical properties | |
| DOI | https://doi.org/10.1209/epl/i2005-10207-y | |
| Published online | 31 August 2005 | |
Mobility gap in intermediate valent 
1
1. Physikalisches Institut, Universität Stuttgart Pfaffenwaldring 57, 70550 Stuttgart, Germany
2
General Physics Institute - Moscow, Russia
3
Department of Physics, Graduate School of Science, Tohoku University Sendai 980-8578, Japan
Received:
2
May
2005
Accepted:
3
August
2005
The infrared optical conductivity of the intermediate-valence compound TmSe reveals clear
signatures for hybridization of light d- and heavy f-electronic states with
and 
, respectively. At moderate and high
temperatures, the metal-like character of the heavy carriers dominates the low-frequency
response while at low temperatures (
) a gap-like feature is
observed in the conductivity spectra below 10
which is assigned to be a mobility
gap due to localization of electrons on local Kondo singlets, rather than a hybridization
gap in the density of states.
PACS: 71.28.+d – Narrow-band systems; intermediate-valence solids / 75.30.Mb – Valence fluctuation, Kondo lattice, and heavy-fermion phenomena
© EDP Sciences, 2005
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