Volume 72, Number 1, October 2005
|Page(s)||103 - 109|
|Section||Condensed matter: electronic structure, electrical, magnetic, and optical properties|
|Published online||31 August 2005|
Mobility gap in intermediate valent
1. Physikalisches Institut, Universität Stuttgart Pfaffenwaldring 57, 70550 Stuttgart, Germany
2 General Physics Institute - Moscow, Russia
3 Department of Physics, Graduate School of Science, Tohoku University Sendai 980-8578, Japan
Accepted: 3 August 2005
The infrared optical conductivity of the intermediate-valence compound TmSe reveals clear signatures for hybridization of light d- and heavy f-electronic states with and , respectively. At moderate and high temperatures, the metal-like character of the heavy carriers dominates the low-frequency response while at low temperatures () a gap-like feature is observed in the conductivity spectra below 10 which is assigned to be a mobility gap due to localization of electrons on local Kondo singlets, rather than a hybridization gap in the density of states.
PACS: 71.28.+d – Narrow-band systems; intermediate-valence solids / 75.30.Mb – Valence fluctuation, Kondo lattice, and heavy-fermion phenomena
© EDP Sciences, 2005
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