Volume 72, Number 2, October 2005
|Page(s)||282 - 286|
|Section||Condensed matter: electronic structure, electrical, magnetic, and optical properties|
|Published online||07 September 2005|
Simulation of quantum dead-layers in nanoscale ferroelectric tunnel junctions
Institute for Thin Films and Interfaces (ISG-1) and Center of Nanoelectronic Systems for Information Technology (CNI), Research Centre Jülich GmbH D-52425 Jülich, Germany
2 Institute for Solid State Research (IFF) and Center of Nanoelectronic Systems for Information Technology (CNI), Research Centre Jülich GmbH D-52425 Jülich, Germany
3 Department of Material Science and Engineering and Department of Physics University of California - Berkeley, CA 94720, USA
Accepted: 12 August 2005
The usage of nanoscale ferroelectric films as tunnel barriers in electronic devices offers a unique possibility to study the physics of ultrathin ferroelectric materials by means of electronic transport. In this letter, we simulate the current-voltage characteristics of a metal-ferroelectric-metal tunnel junction by use of a nonequilibrium Green's function approach. We discuss the role of quantum effects such as Friedel oscillations, which lead to deviations from the conventional semiclassical description of contacts in such a tunneling structure. As a consequence, we predict a well-pronounced bistable resistive switching effect, depending on the polarization state of the ferroelectric tunnel barrier.
PACS: 77.80.Fm – Switching phenomena / 73.40.Gk – Tunneling / 73.40.Rw – Metal-insulator-metal structures
© EDP Sciences, 2005
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