Volume 72, Number 3, November 2005
|Page(s)||416 - 422|
|Section||Condensed matter: structural, mechanical and thermal properties|
|Published online||07 October 2005|
Fluence effect on ion-implanted diffusion in relaxed
Accelerator Laboratory, University of Helsinki P.O. Box 43, FIN-00014 Helsinki, Finland
2 The ISOLDE Collaboration, CERN - CH-1211 Genève 23, Switzerland
3 Department of Physics, University of Jyväskylä P.O. Box 35, FIN-40351 Jyväskylä, Finland
4 VTT Processes - P.O. Box 1608, FIN-02044, Finland
Corresponding author: email@example.com
Accepted: 13 September 2005
A systematic study on the fluence ( dependence of ion-implanted As diffusion in relaxed alloys (with , 0.35 and 0.5) and silicon has been performed by the modified radiotracer and secondary ion mass spectrometry techniques. With fluences above a clear fluence-dependent enhancement in arsenic diffusion was noted for . In case of arsenic-implanted silicon such fluence dependency was not observed. This can be assigned to enhanced implantation-induced damage formation and more deficient radiation damage recovery of .
PACS: 61.72.Tt – Doping and impurity implantation in germanium and silicon / 66.30.Jt – Diffusion of impurities
© EDP Sciences, 2005
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