Volume 72, Number 3, November 2005
|Page(s)||416 - 422|
|Section||Condensed matter: structural, mechanical and thermal properties|
|Published online||07 October 2005|
Fluence effect on ion-implanted diffusion in relaxed
Accelerator Laboratory, University of Helsinki P.O. Box 43, FIN-00014 Helsinki, Finland
2 The ISOLDE Collaboration, CERN - CH-1211 Genève 23, Switzerland
3 Department of Physics, University of Jyväskylä P.O. Box 35, FIN-40351 Jyväskylä, Finland
4 VTT Processes - P.O. Box 1608, FIN-02044, Finland
Corresponding author: firstname.lastname@example.org
Accepted: 13 September 2005
A systematic study on the fluence ( dependence of ion-implanted As diffusion in relaxed alloys (with , 0.35 and 0.5) and silicon has been performed by the modified radiotracer and secondary ion mass spectrometry techniques. With fluences above a clear fluence-dependent enhancement in arsenic diffusion was noted for . In case of arsenic-implanted silicon such fluence dependency was not observed. This can be assigned to enhanced implantation-induced damage formation and more deficient radiation damage recovery of .
PACS: 61.72.Tt – Doping and impurity implantation in germanium and silicon / 66.30.Jt – Diffusion of impurities
© EDP Sciences, 2005
Current usage metrics show cumulative count of Article Views (full-text article views including HTML views, PDF and ePub downloads, according to the available data) and Abstracts Views on Vision4Press platform.
Data correspond to usage on the plateform after 2015. The current usage metrics is available 48-96 hours after online publication and is updated daily on week days.
Initial download of the metrics may take a while.