Fluence effect on ion-implanted diffusion in relaxed

¹ Accelerator Laboratory, University of Helsinki P.O. Box 43, FIN-00014 Helsinki, Finland
² The ISOLDE Collaboration, CERN - CH-1211 Genève 23, Switzerland
³ Department of Physics, University of Jyväskylä P.O. Box 35, FIN-40351 Jyväskylä, Finland
⁴ VTT Processes - P.O. Box 1608, FIN-02044, Finland

Corresponding author: jyrki.raisanen@helsinki.fi

Received: 9 June 2005
Accepted: 13 September 2005

Abstract

A systematic study on the fluence ( dependence of ion-implanted As diffusion in relaxed alloys (with , 0.35 and 0.5) and silicon has been performed by the modified radiotracer and secondary ion mass spectrometry techniques. With fluences above a clear fluence-dependent enhancement in arsenic diffusion was noted for . In case of arsenic-implanted silicon such fluence dependency was not observed. This can be assigned to enhanced implantation-induced damage formation and more deficient radiation damage recovery of .