Volume 72, Number 3, November 2005
|Page(s)||430 - 436|
|Section||Condensed matter: electronic structure, electrical, magnetic, and optical properties|
|Published online||12 October 2005|
Bound states at impurities in a two-dimensional metal
LEPES-CNRS - BP 166, 38042 Grenoble Cedex 9, France
Accepted: 15 September 2005
We present an experimental study of the local electronic properties of atomic-size impurities in an layer grown on the Si(111) surface, which behaves as a quasi–two-dimensional (2D) metal. From scanning tunneling spectroscopy measurements at , we show that the silicide 2D state probed on defect-free areas becomes localized at impurities. For two different silicide point-defects, a resonance is found in the conductance spectra, at voltages above the 2D state band edge. This resonance is interpreted as a bound state within a repulsive impurity potential model. Spectroscopy on additional extra-impurities obtained after Co deposition is also reported.
PACS: 73.20.At – Surface states, band structure, electron density of states / 68.37.Ef – Scanning tunneling microscopy (including chemistry induced with STM) / 73.20.Hb – Impurity and defect levels; energy states of adsorbed species
© EDP Sciences, 2005
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