Volume 73, Number 3, February 2006
|Page(s)||415 - 421|
|Section||Condensed matter: electronic structure, electrical, magnetic, and optical properties|
|Published online||21 December 2005|
Magnetoresistance in amorphous oxide films
I. Physikalisches Institut, Universität Göttingen - Friedrich-Hund-Platz 1 D-37077 Göttingen, Germany
2 II. Physikalisches Institut, Universität Göttingen - Friedrich-Hund-Platz 1 D-37077 Göttingen, Germany
3 II. Physikalisches Institut, RWTH Aachen - Templergraben 55 D-52056 Aachen, Germany
Corresponding author: email@example.com
Accepted: 1 December 2005
This paper shows results on structural and magnetotransport measurements for reactively sputtered amorphous oxide films ( with and their layered structures. A strong x-dependency was found to be related to microstructural changes caused by oxygen-induced chemical phase separation. For low x, pair-correlated atom clusters dominate and the films are soft ferromagnetic with excellent uniaxial magnetic anisotropy. Small coercivity Oe, enhanced magnetisation emu/cm3 and low resistivity Ωcm were measured for these films, showing a good potential for application in magnetoelectronics. For large x, however, since - pair-correlated atom clusters are dominant, the films become granular-like superparamagnetic with a saturation field kOe and a remanence . ρ is extremely high presumably due to Coulomb blockade effect. A large magnetoresistance was observed, being 30% (70 kOe) at 5 K and 10% at room temperature. This effect can be attributed to spin-dependent tunnelling among lateral separated - clusters. The layered structure shows a small, but low-field magnetotunnelling effect.
PACS: 75.70.-i – Magnetic properties of thin films, surfaces, and interfaces / 75.50.-y – Studies of specific magnetic materials
© EDP Sciences, 2006
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