Volume 73, Number 5, March 2006
|Page(s)||786 - 792|
|Section||Condensed matter: electronic structure, electrical, magnetic, and optical properties|
|Published online||25 January 2006|
Spin-polarized hole transport through a diluted magnetic semiconductor heterostructure with magnetic-field modulations
The American College - Madurai-625 002, India
2 School of Physics, Madurai-Kamaraj University - Madurai-625 021, India
Accepted: 10 January 2006
We investigate the spin-polarized transport of holes in symmetric and asymmetric diluted magnetic semiconductor heterostructures of CdTe/CdMnxTe under local magnetic-field modulations. The effect of a type-I–to–type-II transition in the CdTe/CdMnxTe heterostructure is also used in our model. The spatially modulated magnetic field provides us with a new degree of freedom to control the degree of spin-polarized transport of holes. Our investigations show that spin-polarized transport of holes reaches 100% polarization with modulated weak magnetic field. This could be suitably engineered in the fabrication of perfect magnetic semiconductor spin-filters.
PACS: 75.50.Pp – Magnetic semiconductors / 72.25.-b – Spin polarized transport / 73.40.Gk – Tunneling
© EDP Sciences, 2006
Current usage metrics show cumulative count of Article Views (full-text article views including HTML views, PDF and ePub downloads, according to the available data) and Abstracts Views on Vision4Press platform.
Data correspond to usage on the plateform after 2015. The current usage metrics is available 48-96 hours after online publication and is updated daily on week days.
Initial download of the metrics may take a while.