Issue |
Europhys. Lett.
Volume 76, Number 4, November 2006
|
|
---|---|---|
Page(s) | 690 - 695 | |
Section | Interdisciplinary physics and related areas of science and technology | |
DOI | https://doi.org/10.1209/epl/i2006-10331-2 | |
Published online | 20 October 2006 |
Structured porous silicon sub-micrometer wells grown by colloidal lithography
Departamento de Física Aplicada C-XII, Universidad Autónoma de Madrid 28049 Madrid, Spain
Received:
11
August
2006
Accepted:
27
September
2006
Periodic porous silicon sub-micrometer wells embedded into a silicon matrix have been grown by a combination of colloidal lithography, plasma processing and electrochemical etching. The process relies on the formation of a self-assembled monolayer of polystyrene microspheres, which are etched in an Ar/O2 plasma. A polymer resist is subsequently deposited by plasma polymerization. Finally, after colloidal particle removal, the surface is electrochemically etched in HF to form the porous silicon wells.
PACS: 85.40.Hp – Lithography, masks and pattern transfer / 81.05.Rm – Porous materials; granular materials / 81.05.Cy – Elemental semiconductors
© EDP Sciences, 2006
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