Volume 76, Number 4, November 2006
|Page(s)||690 - 695|
|Section||Interdisciplinary physics and related areas of science and technology|
|Published online||20 October 2006|
Structured porous silicon sub-micrometer wells grown by colloidal lithography
Departamento de Física Aplicada C-XII, Universidad Autónoma de Madrid 28049 Madrid, Spain
Accepted: 27 September 2006
Periodic porous silicon sub-micrometer wells embedded into a silicon matrix have been grown by a combination of colloidal lithography, plasma processing and electrochemical etching. The process relies on the formation of a self-assembled monolayer of polystyrene microspheres, which are etched in an Ar/O2 plasma. A polymer resist is subsequently deposited by plasma polymerization. Finally, after colloidal particle removal, the surface is electrochemically etched in HF to form the porous silicon wells.
PACS: 85.40.Hp – Lithography, masks and pattern transfer / 81.05.Rm – Porous materials; granular materials / 81.05.Cy – Elemental semiconductors
© EDP Sciences, 2006
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