Volume 78, Number 3, May 2007
|Number of page(s)||4|
|Section||Condensed Matter: Electronic Structure, Electrical, Magnetic and Optical Properties|
|Published online||27 April 2007|
Evidence for carrier-induced high- ferromagnetism in Mn-doped GaN film
KYOKUGEN, Osaka University - 1-3 Machikaneyama, Toyonaka, Osaka 560-8531, Japan
2 Department of Electronics and Information Science, Kyoto Institute of Technology - Kyoto 606-8585, Japan
3 School of Materials Science, Japan Advanced Institute of Science and Technology (JAIST) - 1-1 Asahidai Tatsunokuchi, Ishikawa 923-1292, Japan
4 Department of System Innovation, Osaka University - Toyonaka, Osaka 560-8531, Japan
5 Institute for Solid State Physics, University of Tokyo - Kashiwa 277-8581, Japan
Corresponding author: firstname.lastname@example.org
Accepted: 27 March 2007
A GaN film doped with 8.2% Mn was grown by the molecular-beam-epitaxy technique. Magnetization measurements show that this highly Mn-doped GaN film exhibits ferromagnetism above room temperature. It is also revealed that the high-temperature ferromagnetic state is significantly suppressed below 10 K, accompanied by an increase of the electrical resistivity with decreasing temperature. This observation clearly demonstrates a close relation between the ferromagnetism with extremely high and the carrier transport in the Mn-doped GaN film.
PACS: 75.50.Pp – Magnetic semiconductors / 73.50.-h – Electronic transport phenomena in thin films / 73.61.Ey – III-V semiconductors
© Europhysics Letters Association, 2007
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