| Issue |
EPL
Volume 78, Number 5, June 2007
|
|
|---|---|---|
| Article Number | 57006 | |
| Number of page(s) | 4 | |
| Section | Condensed Matter: Electronic Structure, Electrical, Magnetic and Optical Properties | |
| DOI | https://doi.org/10.1209/0295-5075/78/57006 | |
| Published online | 24 May 2007 | |
The effect of low-temperature annealing on ferromagnetic 
thin films studied by photoemission spectroscopy
1
Key Laboratory of Material Physics, Institute of Solid State Physics, Chinese Academy of Sciences Hefei, Anhui, China
2
Physics Department, the Hong Kong University of Science and Technology - Clear Water Bay, Kowloon, Hong Kong, China
3
National Synchrotron Radiation Laboratory, University of Science and Technology of China - Hefei, Anhui, China
Received:
8
March
2007
Accepted:
24
April
2007
A systematic photoemission and variable temperature resistivity measurements are carried out on Ga0.946Mn0.054As ferromagnetic semiconductors. It is showed that the Mn 3d valence band and the As 3d core-level spectrum are modified by the annealing treatment. Correlating these modifications with the observed changes in the resistivity and Curie temperatures, we have identified that the low-temperature annealing most likely induces three changes: interstitial Mn out-diffusion, slight increase of the substitution Mn components, and reduction of excess As.
PACS: 75.50.Pp – Magnetic semiconductors
© Europhysics Letters Association, 2007
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