Issue |
EPL
Volume 78, Number 5, June 2007
|
|
---|---|---|
Article Number | 57006 | |
Number of page(s) | 4 | |
Section | Condensed Matter: Electronic Structure, Electrical, Magnetic and Optical Properties | |
DOI | https://doi.org/10.1209/0295-5075/78/57006 | |
Published online | 24 May 2007 |
The effect of low-temperature annealing on ferromagnetic
thin films studied by photoemission spectroscopy
1
Key Laboratory of Material Physics, Institute of Solid State Physics, Chinese Academy of Sciences Hefei, Anhui, China
2
Physics Department, the Hong Kong University of Science and Technology - Clear Water Bay, Kowloon, Hong Kong, China
3
National Synchrotron Radiation Laboratory, University of Science and Technology of China - Hefei, Anhui, China
Received:
8
March
2007
Accepted:
24
April
2007
A systematic photoemission and variable temperature resistivity measurements are carried out on Ga0.946Mn0.054As ferromagnetic semiconductors. It is showed that the Mn 3d valence band and the As 3d core-level spectrum are modified by the annealing treatment. Correlating these modifications with the observed changes in the resistivity and Curie temperatures, we have identified that the low-temperature annealing most likely induces three changes: interstitial Mn out-diffusion, slight increase of the substitution Mn components, and reduction of excess As.
PACS: 75.50.Pp – Magnetic semiconductors
© Europhysics Letters Association, 2007
Current usage metrics show cumulative count of Article Views (full-text article views including HTML views, PDF and ePub downloads, according to the available data) and Abstracts Views on Vision4Press platform.
Data correspond to usage on the plateform after 2015. The current usage metrics is available 48-96 hours after online publication and is updated daily on week days.
Initial download of the metrics may take a while.