Volume 78, Number 5, June 2007
|Number of page(s)||4|
|Section||Condensed Matter: Electronic Structure, Electrical, Magnetic and Optical Properties|
|Published online||24 May 2007|
The effect of low-temperature annealing on ferromagnetic thin films studied by photoemission spectroscopy
Key Laboratory of Material Physics, Institute of Solid State Physics, Chinese Academy of Sciences Hefei, Anhui, China
2 Physics Department, the Hong Kong University of Science and Technology - Clear Water Bay, Kowloon, Hong Kong, China
3 National Synchrotron Radiation Laboratory, University of Science and Technology of China - Hefei, Anhui, China
Accepted: 24 April 2007
A systematic photoemission and variable temperature resistivity measurements are carried out on Ga0.946Mn0.054As ferromagnetic semiconductors. It is showed that the Mn 3d valence band and the As 3d core-level spectrum are modified by the annealing treatment. Correlating these modifications with the observed changes in the resistivity and Curie temperatures, we have identified that the low-temperature annealing most likely induces three changes: interstitial Mn out-diffusion, slight increase of the substitution Mn components, and reduction of excess As.
PACS: 75.50.Pp – Magnetic semiconductors
© Europhysics Letters Association, 2007
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