Volume 78, Number 6, June 2007
|Number of page(s)||5|
|Section||Condensed Matter: Electronic Structure, Electrical, Magnetic and Optical Properties|
|Published online||24 May 2007|
Impurity concentration study on ferromagnetism in Cu-doped thin films
College of Physic Science and Information Engineering, Hebei Normal University - Shijiazhuang 050016, China
Corresponding author: email@example.com
Accepted: 2 May 2007
We report here the observation of significant room-temperature ferromagnetism in a semiconductor doped with nonmagnetic impurities, Cu-doped rutile thin films grown by reactive magnetron sputtering. Films annealed in air were nonmagnetic while those annealed in vacuum were ferromagnetic with a Curie temperature about 350 K. The magnetic moment per copper atom decreased as the copper concentration increased. These results show that both the oxygen vacancies and the distance between nearest-neighbor copper atoms play a crucial role for the appearance of magnetism.
PACS: 75.50.Pp – Magnetic semiconductors / 75.70.-i – Magnetic properties of thin films, surfaces, and interfaces / 74.25.Ha – Magnetic properties
© Europhysics Letters Association, 2007
Current usage metrics show cumulative count of Article Views (full-text article views including HTML views, PDF and ePub downloads, according to the available data) and Abstracts Views on Vision4Press platform.
Data correspond to usage on the plateform after 2015. The current usage metrics is available 48-96 hours after online publication and is updated daily on week days.
Initial download of the metrics may take a while.