Volume 78, Number 6, June 2007
|Number of page(s)||5|
|Section||Condensed Matter: Electronic Structure, Electrical, Magnetic and Optical Properties|
|Published online||24 May 2007|
Impurity concentration study on ferromagnetism in Cu-doped thin films
College of Physic Science and Information Engineering, Hebei Normal University - Shijiazhuang 050016, China
Corresponding author: firstname.lastname@example.org
Accepted: 2 May 2007
We report here the observation of significant room-temperature ferromagnetism in a semiconductor doped with nonmagnetic impurities, Cu-doped rutile thin films grown by reactive magnetron sputtering. Films annealed in air were nonmagnetic while those annealed in vacuum were ferromagnetic with a Curie temperature about 350 K. The magnetic moment per copper atom decreased as the copper concentration increased. These results show that both the oxygen vacancies and the distance between nearest-neighbor copper atoms play a crucial role for the appearance of magnetism.
PACS: 75.50.Pp – Magnetic semiconductors / 75.70.-i – Magnetic properties of thin films, surfaces, and interfaces / 74.25.Ha – Magnetic properties
© Europhysics Letters Association, 2007
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