Volume 81, Number 3, February 2008
|Number of page(s)||6|
|Section||Interdisciplinary Physics and Related Areas of Science and Technology|
|Published online||21 December 2007|
Well-aligned ZnO nanorods for device applications: Synthesis and characterisation of ZnO nanorods and n-ZnO/p-Si heterojunction diodes
School of Semiconductor and Chemical Engineering, BK 21 Center for Future Energy Materials and Devices, Chonbuk National University - Jeonju - 561 756, South Korea
Corresponding author: email@example.com
Accepted: 26 November 2007
Well-aligned, low-resistive zinc oxide (ZnO) nanorods were grown on ZnO-coated glass and p-Si substrates using a simple and economic solution method. The device performance of ZnO nanorods has been investigated by studying their p-n junction diode behaviour at room temperature. The as-grown n-ZnO/p-Si diode exhibited a low turn-on voltage and saturation current of ~ 2.25 V and ~ 1.27 μA, respectively, with a diode quality factor of 1.9. These investigations reveal that the well-aligned ZnO nanorod structures can be used as an active layer in the fabrication of efficient optoelectronic nano-devices.
PACS: 81.07.-b – Nanoscale materials and structures: fabrication and characterization / 81.16.Be – Chemical synthesis methods / 73.63.-b – Electronic transport in nanoscale materials and structures
© EPLA, 2008
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