Volume 81, Number 5, March 2008
|Number of page(s)||5|
|Section||Condensed Matter: Electronic Structure, Electrical, Magnetic and Optical Properties|
|Published online||12 February 2008|
Spin-orbit interaction effect in the electronic structure of Bi2Te3 observed by angle-resolved photoemission spectroscopy
Department of Physics, Chonnam National University - Gwangju 500-757, Korea
2 School of Physics & Center for Strongly Correlated Materials Research, Seoul National University Seoul 151-742, Korea
3 Department of Physics, Pohang University of Science and Technology - Pohang 790-784, Korea
4 Pohang Accelerator Laboratory, Pohang University of Science and Technology - Pohang 790-784, Korea
5 Condensed Matter Physics and Materials Science Department, Brookhaven National Laboratory Upton, NY 11973, USA
6 Department of Physics & Astronomy, Stony Brook University - Stony Brook, NY 11974, USA
Corresponding author: email@example.com
Accepted: 14 January 2008
The electronic structure of p-type doped Bi2Te3 is studied by angle-resolved photoemission spectroscopy (ARPES) to experimentally confirm the mechanism responsible for the high thermoelectric figure of merit. Our ARPES study shows that the band edges are located off the -Z line in the Brillouin zone, which provides direct observation that the spin-orbit interaction is a key factor to understand the electronic structure and the corresponding thermoelectric properties of Bi2Te3. A successive time-dependent ARPES measurement also reveals that the electron-like bands crossing EF near the -point are formed in an hour after cleaving the crystals. We interpret these as surface states induced by surface band bending, possibly due to quintuple inter-layer distance change of Bi2Te3.
PACS: 72.15.Jf – Thermoelectric and thermomagnetic effects / 71.20.Nr – Semiconductor compounds / 79.60.-i – Photoemission and photoelectron spectra
© EPLA, 2008
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