Volume 81, Number 6, March 2008
|Number of page(s)||5|
|Section||Condensed Matter: Electronic Structure, Electrical, Magnetic and Optical Properties|
|Published online||28 February 2008|
Impurity scattering in a strongly correlated host
Laboratoire de Physique des Solides, CNRS et Université Paris-Sud - Bâtiment 510, F-91405 Orsay, France
2 Departamento de Fisica, UFPE - 50670-901 Recife, Brasil
3 Departamento de Física, FCEN, Universidad de Buenos Aires - Ciudad Universitaria Pab.I, (1428) Buenos Aires, Argentina
Accepted: 27 January 2008
This work explores a simple approximation to describe isolated impurity scattering in a strongly correlated host. The approximation combines conventional one-electron scattering theory and the Dynamic Mean-Field Theory to describe strong correlations in the host. It becomes exact in several limits, including those of very strong interactions. We study the problem for a large range of parameter strengths and focus on the case of a strongly correlated metal host near the Mott metal-insulator transition. We find interesting effects on the electronic structure at the impurity site with the appearence of bound states at frequencies that are strongly renormalized from the bare impurity potential value. However, the strength of the threshold potential for the onset of the bound states remains of the order of the bare host bandwidth, i.e. essentially unrenormalized with respect to the non-interacting case. Our results may provide useful guidance for interpretation of scanning tunneling microscopy experiments in strongly correlated systems.
PACS: 71.20.Be – Transition metals and alloys / 72.10.Fk – Scattering by point defects, dislocations, surfaces and other imperfections (including Kondo effect)
© EPLA, 2008
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