Volume 81, Number 6, March 2008
|Number of page(s)||6|
|Section||Condensed Matter: Electronic Structure, Electrical, Magnetic and Optical Properties|
|Published online||29 February 2008|
Probing the electron-phonon coupling in MgB2 through magnetoresistance measurements in neutron irradiated thin films
CNR-INFM-SLACS and Dipartimento di Fisica, Università di Cagliari - Cittadella Universitaria, I-09124 Monserrato (CA), Italy
2 CNR-INFM-LAMIA and Dipartimento di Fisica, Università di Genova - Via Dodecaneso 33, I-16146 Genova, Italy
3 Institut für Theoretische Physik, Freie Universität Berlin - Arnimallee 14, D-14195 Berlin, Germany
4 Paul Scherrer Institut - CH-5232 Villigen, Switzerland
5 GHMFL, MPI-FKF/CNRS - 28 Avenue des Martyrs, BP 166, F-38042 Grenoble Cedex 9, France
6 The Pennsylvania State University - University Park, PA 16802, USA
Accepted: 30 January 2008
We report magnetoresistance (MR) measurements on MgB2 and the corresponding full account from ab initio calculations; we suggest that this combination can be a useful tool to probe electron-phonon coupling. We obtain good quantitative agreement between high-field measurements on neutron-irradiated epitaxial thin films and calculations within Bloch-Boltzmann transport theory over a wide range of magnetic fields (028 T) and temperatures (40300 K), and as a function of the field orientation. The crossovers between in-plane and out-of-plane MR, experimentally observed as a function of either disorder or temperature are well reproduced indicating that disorder and interaction with phonons strongly affect the scattering rate of -carriers.
PACS: 72.10.Di – Scattering by phonons, magnons, and other nonlocalized excitations / 73.43.Qt – Magnetoresistance / 74.70.Ad – Metals; alloys and binary compounds (including A15, MgB2, etc.)
© EPLA, 2008
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