Volume 82, Number 3, May 2008
|Number of page(s)||5|
|Section||Condensed Matter: Structural, Mechanical and Thermal Properties|
|Published online||23 April 2008|
Synthesis of α-Al2O3 thin films using reactive high-power impulse magnetron sputtering
Plasma Coatings Physics Division, IFM Material Physics, Linköping University - SE-581 83 Linköping, Sweden, EU
2 Sandvik Tooling AB - SE-126 80 Stockholm, Sweden, EU
Corresponding author: firstname.lastname@example.org
Accepted: 12 March 2008
α-alumina coatings have been deposited directly onto cemented-carbide and Mo substrates at a temperature as low as 650 °C using reactive high-power impulse magnetron sputtering (HiPIMS) of Al in an ArO2 gas mixture. The coatings consisted of plate-like crystallites, as revealed by scanning electron microscopy. α phase growth was retained over the studied range of substrate bias voltages (from floating potential up to -100V), with films exhibiting a slightly denser microstructure at higher bias voltages. X-ray diffraction indicated that the α-alumina grains had a preferred orientation of (0001)-planes perpendicular to the substrate surface. X-ray analysis of films deposited at 575 °C indicated the presence of γ-alumina, whereas films grown at 500 °C or lower were X-ray amorphous.
PACS: 68.55.-a – Thin film structure and morphology / 81.15.Cd – Deposition by sputtering / 81.05.Je – Ceramics and refractories (including borides, carbides, hydrides, nitrides, oxides, and silicides)
© EPLA, 2008
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