Synthesis of α-Al₂O₃ thin films using reactive high-power impulse magnetron sputtering

¹  Plasma Coatings Physics Division, IFM Material Physics, Linköping University - SE-581 83 Linköping, Sweden, EU
²  Sandvik Tooling AB - SE-126 80 Stockholm, Sweden, EU

Corresponding author: eriwa@ifm.liu.se

Received: 18 February 2008
Accepted: 12 March 2008

Abstract

α-alumina coatings have been deposited directly onto cemented-carbide and Mo substrates at a temperature as low as 650 °C using reactive high-power impulse magnetron sputtering (HiPIMS) of Al in an ArO₂ gas mixture. The coatings consisted of plate-like crystallites, as revealed by scanning electron microscopy. α phase growth was retained over the studied range of substrate bias voltages (from floating potential up to -100V), with films exhibiting a slightly denser microstructure at higher bias voltages. X-ray diffraction indicated that the α-alumina grains had a preferred orientation of (0001)-planes perpendicular to the substrate surface. X-ray analysis of films deposited at 575 °C indicated the presence of γ-alumina, whereas films grown at 500 °C or lower were X-ray amorphous.