Volume 82, Number 3, May 2008
|Number of page(s)||4|
|Section||Condensed Matter: Electronic Structure, Electrical, Magnetic and Optical Properties|
|Published online||21 April 2008|
Controllable electron g-factors in HgMnTe quantum spheres
National Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences P.O. Box 912, Beijing 100083, PRC
Corresponding author: firstname.lastname@example.org
Accepted: 18 March 2008
The electronic structure and Landé electron g-factors of manganese-doped HgTe quantum spheres are investigated, in the framework of the eight-band effective-mass model and the mean-field approximation. It is found that the electronic structure evolves continuously from the zero-gap configuration to an open-gap configuration with decreasing radius. The size dependence of electron g-factors is calculated with different Mn-doped effective concentration, magnetic field, and temperature values, respectively. It is found that the variations of electron g-factors are quite different for small and large quantum spheres, due to the strong exchange-induced interaction and spin-orbit coupling in the narrow-gap DMS nanocrystals. The electron g-factors are zero at a critical point of spherical radius Rc; however, by modulating the nanocrystal size their absolute values can be turned to be even 400 times larger than those in undoped cases.
PACS: 73.21.La – Quantum dots / 75.50.Tt – Fine-particle systems; nanocrystalline materials / 76.30.Fc – Iron group (3d) ions and impurities (Ti–Cu)
© EPLA, 2008
Current usage metrics show cumulative count of Article Views (full-text article views including HTML views, PDF and ePub downloads, according to the available data) and Abstracts Views on Vision4Press platform.
Data correspond to usage on the plateform after 2015. The current usage metrics is available 48-96 hours after online publication and is updated daily on week days.
Initial download of the metrics may take a while.