Volume 82, Number 3, May 2008
|Number of page(s)||4|
|Section||Condensed Matter: Electronic Structure, Electrical, Magnetic and Optical Properties|
|Published online||21 April 2008|
Controllable electron g-factors in HgMnTe quantum spheres
National Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences P.O. Box 912, Beijing 100083, PRC
Corresponding author: email@example.com
Accepted: 18 March 2008
The electronic structure and Landé electron g-factors of manganese-doped HgTe quantum spheres are investigated, in the framework of the eight-band effective-mass model and the mean-field approximation. It is found that the electronic structure evolves continuously from the zero-gap configuration to an open-gap configuration with decreasing radius. The size dependence of electron g-factors is calculated with different Mn-doped effective concentration, magnetic field, and temperature values, respectively. It is found that the variations of electron g-factors are quite different for small and large quantum spheres, due to the strong exchange-induced interaction and spin-orbit coupling in the narrow-gap DMS nanocrystals. The electron g-factors are zero at a critical point of spherical radius Rc; however, by modulating the nanocrystal size their absolute values can be turned to be even 400 times larger than those in undoped cases.
PACS: 73.21.La – Quantum dots / 75.50.Tt – Fine-particle systems; nanocrystalline materials / 76.30.Fc – Iron group (3d) ions and impurities (Ti–Cu)
© EPLA, 2008
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