| Issue |
EPL
Volume 82, Number 6, June 2008
|
|
|---|---|---|
| Article Number | 67001 | |
| Number of page(s) | 6 | |
| Section | Condensed Matter: Electronic Structure, Electrical, Magnetic and Optical Properties | |
| DOI | https://doi.org/10.1209/0295-5075/82/67001 | |
| Published online | 29 May 2008 | |
Magnetoexcitonic optical absorption in semiconductors under strong magnetic fields and intense terahertz radiation in the Voigt configuration
State Key Laboratory of Transient Optics and Photonics, Xi'an Institute of Optics and Precision Mechanics, Chinese Academy of Sciences - 17 Xinxi Road, Xi'an, 710119, PRC
Corresponding author: tyzhang@opt.ac.cn
Received:
11
January
2008
Accepted:
21
April
2008
The magnetoexcitonic optical absorption of a GaAs bulk semiconductor driven by a terahertz (THz) field is investigated numerically. The method of the solution of the initial-value problem, in combination with the perfect matched layer technique, is used to calculate the optical susceptibility, with Coulomb interaction, Landau quantization, and THz fields involved nonperturbatively. It shows that there appear replicas and sidebands of magnetoexciton of different Landau levels, which greatly enrich the magneto-optical spectrum in the presence of a driving THz field.
PACS: 71.35.Ji – Excitons in magnetic fields; magnetoexcitons / 71.35.Cc – Intrinsic properties of excitons; optical absorption spectra / 78.20.Ls – Magnetooptical effects
© EPLA, 2008
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