Volume 82, Number 6, June 2008
|Number of page(s)||5|
|Section||Condensed Matter: Structural, Mechanical and Thermal Properties|
|Published online||04 June 2008|
Diffuse X-ray scattering from graded SiGe/Si layers
Charles University, Faculty of Mathematics and Physics, Department of Condensed Matter Physics Ke Karlovu 5, 121 16 Prague, Czech Republic, EU
2 Institute of Semiconductor Physics, Kepler University - Altenbergerstr. 69, A-4040 Linz, Austria, EU
Corresponding author: email@example.com
Accepted: 29 April 2008
We present a method for the determination of the density profile of misfit dislocations in graded SiGe layers based on high-resolution X-ray diffraction and simulation of diffuse X-ray scattering from misfit dislocations. From the density profile of misfit dislocations both the profile of local plastic relaxation and the profile of the Ge content were determined; the latter compares very well with the results of depth-resolved secondary-ion mass analysis.
PACS: 61.05.cm – X-ray reflectometry (surfaces, interfaces, films) / 61.72.Lk – Linear defects: dislocations, disclination / 68.55.-a – Thin film structure and morphology
© EPLA, 2008
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