Volume 83, Number 4, August 2008
|Number of page(s)||5|
|Section||Condensed Matter: Electronic Structure, Electrical, Magnetic and Optical Properties|
|Published online||29 July 2008|
Observation of an inverted band structure near the surface of InN
Department of Physics, Boston University - Boston, MA 02215, USA
2 Advanced Light Source, Lawrence Berkeley National Laboratory - Berkeley, CA, USA
3 Department of Electrical and Computer Engineering, Boston University - Boston, MA 02215, USA
Corresponding author: firstname.lastname@example.org
Accepted: 23 June 2008
The dispersion of the valence band within the electron accumulation layer of n-type InN has been directly measured using angle-resolved photoemission spectroscopy. Intermixing between the heavy-hole and light-hole valence bands in the intrinsic quantum well potential associated with the near-surface electron accumulation layer results in an inverted band structure, with the valence band maximum lying away from the Brillouin zone center. Such an inverted band structure has not previously been observed in an intrinsic accumulation layer.
PACS: 79.60.Bm – Clean metal, semiconductor, and insulator surfaces / 73.20.At – Surface states, band structure, electron density of states / 71.20.Nr – Semiconductor compounds
© EPLA, 2008
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