Volume 84, Number 1, October 2008
|Number of page(s)||5|
|Section||Condensed Matter: Structural, Mechanical and Thermal Properties|
|Published online||18 September 2008|
Improvement of field emission characteristics of tungsten oxide nanowires by hydrogen plasma treatment
Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University Tainan, 70101, Taiwan, Republic of China
2 Taiwan Semiconductor Manufacturing Company Ltd (TSMC) - Hsinchu 300, Taiwan, Republic of China
3 Department of Electronic Engineering, Wu-Feng Institute of Technology - Chiayi 62153, Taiwan, Republic of China
Corresponding author: email@example.com
Accepted: 12 August 2008
The use of hydrogen plasma (H-plasma) treatment to improve field emission (FE) characteristics of self-synthesized tungsten oxide nanowires (TONWs) is reported. With a H-plasma treatment under a working power of 200 W and a pressure of 500 mtorr for 20 s, improved FE characteristics with a turn-on field (4.7 V/μm at 10 μA/cm2) lower than those of the as-grown case by 23% and a reduction in the effective emission barrier of 0.72 eV were obtained, which is attributed to the reduction in oxygen adsorption, decrease in the wire length and density, and transition of TONWs surfaces from well crystalline into the amorphous phase.
PACS: 61.46.Km – Structure of nanowires and nanorods (long, free or loosely attached, quantum wires and quantum rods, but not gate-isolated embedded quantum wires)
© EPLA, 2008
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