Issue |
EPL
Volume 84, Number 2, October 2008
|
|
---|---|---|
Article Number | 27003 | |
Number of page(s) | 5 | |
Section | Condensed Matter: Electronic Structure, Electrical, Magnetic and Optical Properties | |
DOI | https://doi.org/10.1209/0295-5075/84/27003 | |
Published online | 26 September 2008 |
Anomalous insulator-metal transition and weak ferromagnetism in Nd0.37Sr0.63MnO3 thin films
1
National Physical Laboratory - Dr K. S. Krishnan Road, New Delhi-110012, India
2
Département de Physique and RQMP, Université de Sherbrooke - Sherbrooke-J1K 2R1, Canada
Corresponding authors: mangala.singh@usherbrooke.ca hks65@mail.nplindia.ernet.in
Received:
1
April
2008
Accepted:
2
September
2008
We report thickness-dependent magnetic and transport properties at the boundary separating A- and C-type antiferromagnetic phases in films of the overdoped manganite Nd0.37Sr0.63MnO3. The thin films are prepared by DC magnetron sputtering on single-crystal LaAlO3 substrates. All films, 5-120 nm in thickness, show a paramagnetic-ferromagnetic (PM-FM) transition. The small value of magnetization ( 0.45
/Mn) is suggestive of the weak nature of the FM correlations that is different from the prototype PM-FM transition due to double exchange (DE). At lower film thicknesses, such as 5 and 25 nm, zero-field resistivity shows an insulator-like behavior. An insulator-metal (IM) transition is observed at higher film thicknesses (
60 nm). The magnetic-field independence of the observed I M transition (TIM ~ 125 K) distinguishes it from the same observed in prototype manganites (x ~ 0.2-0.4) and explained by D E. For the thinnest films, a CMR effect as large as MR ~ 85% is observed in the low-temperature regime. The observed phenomena can be explained in terms of orbital-fluctuation
induced phase separation.
PACS: 75.47.Lx – Manganites / 73.50.-h – Electronic transport phenomena in thin films / 75.70.-i – Magnetic properties of thin films, surfaces, and interfaces
© EPLA, 2008
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