Volume 84, Number 2, October 2008
|Number of page(s)||4|
|Section||Condensed Matter: Electronic Structure, Electrical, Magnetic and Optical Properties|
|Published online||14 October 2008|
Transport properties and superconductivity in BaMxFe2As2 (M=La and K) with double FeAs layers
Hefei National Laboratory for Physical Science at Microscale and Department of Physics, University of Science and Technology of China - Hefei, Anhui 230026, PRC
Corresponding author: firstname.lastname@example.org
Accepted: 4 September 2008
We synthesized the samples BaMxFe2As2 ( M = La and K) with a ThCr2Si2-type structure. These samples were systematically characterized by resistivity, thermoelectric power (TEP) and Hall coefficient (RH). BaFe2As2 shows an anomaly in resistivity at about 140 K. The substitution of La for Ba leads to a shift of the anomaly to low temperature, but no superconducting transition is observed. Potassium doping leads to the suppression of the anomaly in resistivity and induces superconductivity at 38 K. The Hall coefficient and TEP measurements indicate that the TEP is negative for BaFe2As2 and La-doped BaFe2As2, indicating an n-type carrier; while potassium doping leads to a change of the sign in RH and TEP. It definitely indicates a p-type carrier in the superconducting BaKxFe2As2 with double FeAs layers, being in contrast to the case of LnOFxFeAs with a single FeAs layer.
PACS: 74.10.+v – Occurrence, potential candidates / 74.25.Fy – Transport properties (electric and thermal conductivity, thermoelectric effects, etc.) / 74.25.Dw – Superconductivity phase diagrams
© EPLA, 2008
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