Issue |
EPL
Volume 84, Number 5, December 2008
|
|
---|---|---|
Article Number | 57004 | |
Number of page(s) | 5 | |
Section | Condensed Matter: Electronic Structure, Electrical, Magnetic and Optical Properties | |
DOI | https://doi.org/10.1209/0295-5075/84/57004 | |
Published online | 26 November 2008 |
Observation of excited states in a p-type GaAs quantum dot
1
Solid State Physics Laboratory, ETH Zürich - 8093 Zürich, Switzerland
2
Angewandte Festkörperphysik, Ruhr-Universität Bochum - 44780 Bochum, Germany, EU
Corresponding author: csontos@phys.ethz.ch
Received:
8
September
2008
Accepted:
23
October
2008
A quantum dot fabricated by scanning probe oxidation lithography on a p-type, C-doped GaAs/AlGaAs heterostructure is investigated by low-temperature electrical conductance measurements. Clear Coulomb blockade oscillations are observed and analyzed in terms of sequential tunneling through the single-particle levels of the dot at = 185 mK. The charging energies as large as ~ 2 meV evaluated from Coulomb diamond measurements together with the well-resolved single-hole excited-state lines in the charge stability diagram indicate that the dot is operated with a small number of confined particles close to the ultimate single-hole regime.
PACS: 73.63.Kv – Quantum dots / 73.23.Hk – Coulomb blockade; single-electron tunneling / 73.61.Ey – III–V semiconductors
© EPLA, 2008
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