Volume 84, Number 5, December 2008
|Number of page(s)||5|
|Section||Condensed Matter: Electronic Structure, Electrical, Magnetic and Optical Properties|
|Published online||26 November 2008|
Observation of excited states in a p-type GaAs quantum dot
Solid State Physics Laboratory, ETH Zürich - 8093 Zürich, Switzerland
2 Angewandte Festkörperphysik, Ruhr-Universität Bochum - 44780 Bochum, Germany, EU
Corresponding author: firstname.lastname@example.org
Accepted: 23 October 2008
A quantum dot fabricated by scanning probe oxidation lithography on a p-type, C-doped GaAs/AlGaAs heterostructure is investigated by low-temperature electrical conductance measurements. Clear Coulomb blockade oscillations are observed and analyzed in terms of sequential tunneling through the single-particle levels of the dot at = 185 mK. The charging energies as large as ~ 2 meV evaluated from Coulomb diamond measurements together with the well-resolved single-hole excited-state lines in the charge stability diagram indicate that the dot is operated with a small number of confined particles close to the ultimate single-hole regime.
PACS: 73.63.Kv – Quantum dots / 73.23.Hk – Coulomb blockade; single-electron tunneling / 73.61.Ey – III–V semiconductors
© EPLA, 2008
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