Volume 84, Number 5, December 2008
|Number of page(s)||5|
|Section||Condensed Matter: Electronic Structure, Electrical, Magnetic and Optical Properties|
|Published online||16 December 2008|
Improved transfer matrix method without numerical instability
Department of Physics, Fudan University - Shanghai 200433, China
Corresponding author: email@example.com
Accepted: 3 November 2008
A new improved transfer matrix method (TMM) is presented. It is shown that the method not only overcomes the numerical instability found in the original TMM, but also greatly improves the scalability of computation. The new improved TMM has no extra cost of computing time as the length of the homogeneous scattering region becomes large. The comparison between the scattering matrix method (SMM) and our new TMM is given. It clearly shows that our new method is much faster than the SMM.
PACS: 72.25.Dc – Spin polarized transport in semiconductors / 73.23.-b – Electronic transport in mesoscopic systems / 85.75.Nn – Hybrid Hall devices
© EPLA, 2008
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