| Issue |
EPL
Volume 85, Number 5, March 2009
|
|
|---|---|---|
| Article Number | 57009 | |
| Number of page(s) | 5 | |
| Section | Condensed Matter: Electronic Structure, Electrical, Magnetic and Optical Properties | |
| DOI | https://doi.org/10.1209/0295-5075/85/57009 | |
| Published online | 20 March 2009 | |
Valence bond dynamical mean-field theory of doped Mott insulators with nodal/antinodal differentiation
1
Centre de Physique Théorique, CNRS, Ecole Polytechnique - 91128 Palaiseau Cedex, France, EU
2
Centro Atómico Bariloche and Instituto Balseiro, CNEA, CONICET - 8400 Bariloche, Argentina
3
Institut de Physique Théorique, CEA, IPhT, CNRS, URA 2306 - 91191 Gif-sur-Yvette, France, EU
4
Physics Department and Center for Materials Theory, Rutgers University - Piscataway, NJ 08854, USA
Received:
4
November
2008
Accepted:
17
February
2009
We introduce a valence bond dynamical mean-field theory of doped Mott insulators. It is based on a minimal cluster of two orbitals, each associated with a different region of momentum space and hybridized to a self-consistent bath. The low-doping regime is characterized by singlet formation and the suppression of quasiparticles in the antinodal regions, leading to the formation of Fermi arcs. This is described in terms of an orbital-selective transition in reciprocal space. The calculated tunneling and photoemission spectra are consistent with the phenomenology of the normal state of cuprates. We derive a low-energy description of these effects using a generalization of the slave-boson method.
PACS: 71.27.+a – Strongly correlated electron systems; heavy fermions / 71.30.+h – Metal-insulator transitions and other electronic transitions / 74.72.-h – Cuprate superconductors (high-
and insulating parent compounds)
© EPLA, 2009
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