Volume 85, Number 6, March 2009
|Number of page(s)||6|
|Section||Condensed Matter: Electronic Structure, Electrical, Magnetic and Optical Properties|
|Published online||07 April 2009|
Carrier injection effects on exciton dynamics in GaAs/AlAs resonant-tunneling diodes
Departamento de Física de Materiales and Instituto Nicolás Cabrera, Universidad Autónoma de Madrid 28049 Madrid Spain, EU
2 School of Physics and Astronomy, University of Nottingham - NG7 2RD Nottingham, UK, EU
Accepted: 6 March 2009
We investigate the dynamics of excitons created in a quantum well embedded in a double-barrier resonant-tunneling diode under applied bias. We find that the exciton dynamics is highly correlated with carrier tunneling processes. The tunneling favors exciton relaxation via exciton-carrier scattering processes.
PACS: 71.35.-y – Excitons and related phenomena / 73.40.Gk – Tunneling / 78.47.Cd – Time resolved luminescence
© EPLA, 2009
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