| Issue |
EPL
Volume 85, Number 6, March 2009
|
|
|---|---|---|
| Article Number | 67010 | |
| Number of page(s) | 6 | |
| Section | Condensed Matter: Electronic Structure, Electrical, Magnetic and Optical Properties | |
| DOI | https://doi.org/10.1209/0295-5075/85/67010 | |
| Published online | 07 April 2009 | |
Carrier injection effects on exciton dynamics in GaAs/AlAs resonant-tunneling diodes
1
Departamento de Física de Materiales and Instituto Nicolás Cabrera, Universidad Autónoma de Madrid 28049 Madrid Spain, EU
2
School of Physics and Astronomy, University of Nottingham - NG7 2RD Nottingham, UK, EU
Received:
17
December
2008
Accepted:
6
March
2009
We investigate the dynamics of excitons created in a quantum well embedded in a double-barrier resonant-tunneling diode under applied bias. We find that the exciton dynamics is highly correlated with carrier tunneling processes. The tunneling favors exciton relaxation via exciton-carrier scattering processes.
PACS: 71.35.-y – Excitons and related phenomena / 73.40.Gk – Tunneling / 78.47.Cd – Time resolved luminescence
© EPLA, 2009
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