| Issue |
EPL
Volume 86, Number 6, June 2009
|
|
|---|---|---|
| Article Number | 66005 | |
| Number of page(s) | 6 | |
| Section | Condensed Matter: Structural, Mechanical and Thermal Properties | |
| DOI | https://doi.org/10.1209/0295-5075/86/66005 | |
| Published online | 13 July 2009 | |
Atomistic simulations of elastic and plastic properties in amorphous silicon
1
Université de Lyon - F-69622, France Université de Lyon 1, Laboratoire PMCN; CNRS, UMR 5586 - F-69622 Villeurbanne Cedex
2
Institut für Sicherheitsforschung, Forschungszentrum Rossendorf e.V. - Postfach 510119, 01314 Dresden, Germany
Corresponding authors: m.talati@fzd.de Tristan.Albaret@lpmcn.univ-lyon1.fr Anne.Tanguy@lpmcn.univ-lyon1.fr
Received:
23
April
2009
Accepted:
4
June
2009
We present here potential-dependent mechanical properties of amorphous silicon studied through molecular dynamics (MD) at low temperature. On average, the localization of elementary plastic events and the co-ordination defect sites appears to be correlated. For Tersoff potential and SW potential the plastic events centered on defect sites prefer 5-fold defect sites, while for modified Stillinger-Weber potential such plastic events choose 3-fold defect sites. We also analyze the non-affine displacement field in amorphous silicon obtained for different shear regime. The non-affine displacement field localizes when plastic events occur and shows elementary shear band formation at higher shear strains.
PACS: 61.43.Er – Other amorphous solids / 62.20.-x – Mechanical properties of solids / 62.20.F- – Deformation and plasticity
© EPLA, 2009
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