Volume 87, Number 2, July 2009
|Number of page(s)||5|
|Section||Condensed Matter: Electronic Structure, Electrical, Magnetic and Optical Properties|
|Published online||29 July 2009|
Valence-bond theory of highly disordered quantum antiferromagnets
National High Magnetic Field Laboratory, Florida State University - Tallahassee, FL 32310, USA
2 Department of Physics, Duke University - Durham, NC 27708, USA
3 Instituto de Física Gleb Wataghin, Unicamp - C.P. 6165, Campinas, São Paulo 13083-970, Brazil
Corresponding author: firstname.lastname@example.org
Accepted: 1 July 2009
We present a large-N variational approach to describe the magnetism of insulating doped semiconductors based on a disorder-generalization of the resonating-valence-bond theory for quantum antiferromagnets. This method captures all the qualitative and even quantitative predictions of the strong-disorder renormalization group approach over the entire experimentally relevant temperature range. Finally, by mapping the problem on a hard-sphere fluid, we could provide an essentially exact analytic solution without any adjustable parameters.
PACS: 75.10.Jm – Quantized spin models / 71.55.-i – Impurity and defect levels / 71.70.Gm – Exchange interactions
© EPLA, 2009
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