| Issue |
EPL
Volume 87, Number 2, July 2009
|
|
|---|---|---|
| Article Number | 26004 | |
| Number of page(s) | 5 | |
| Section | Condensed Matter: Structural, Mechanical and Thermal Properties | |
| DOI | https://doi.org/10.1209/0295-5075/87/26004 | |
| Published online | 30 July 2009 | |
Si nanoparticles in SiO2 An atomic scale observation for optimization of optical devices
1
Groupe de Physique des Matériaux, Université et INSA de Rouen, UMR CNRS 6634 - Av. de l'université, BP 12, 76801 Saint Etienne du Rouvray, France, EU
2
Centre de Recherche sur les Ions, les Matériaux et la Photonique - Equipe NIMPH, UMR CNRS 6252 ENSICAEN 6 Bd. Maréchal Juin, 14050 Caen, France, EU
Corresponding author: etienne.talbot@univ-rouen.fr
Received:
20
January
2009
Accepted:
6
July
2009
Three-dimensional imaging of silicon nanoclusters array in silicon-rich silicon oxide layers was evidenced and studied. The atom probe tomography technique allows to give the composition of the nanoclusters and the composition of the interface with the silica matrix. These results give new insights for the understanding of the properties of Si-based photonic devices.
PACS: 61.46.-w – Structure of nanoscale materials / 68.37.-d – Microscopy of surfaces, interfaces, and thin films / 81.15.Cd – Deposition by sputtering
© EPLA, 2009
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