Volume 87, Number 3, August 2009
|Number of page(s)||5|
|Section||Condensed Matter: Electronic Structure, Electrical, Magnetic and Optical Properties|
|Published online||25 August 2009|
Anderson transition in disordered graphene
Department of Physics, Isfahan University of Technology - Isfahan 84154-83111, Iran
2 The Abdus Salam ICTP - 34100 Trieste, Italy, EU
Corresponding author: firstname.lastname@example.org
Accepted: 21 July 2009
We use the regularized kernel polynomial method (RKPM) to numerically study the effect disorder on a single layer of graphene. This accurate numerical method enables us to study very large lattices with millions of sites, and hence is almost free of finite-size errors. Within this approach, both weak- and strong-disorder regimes are handled on the same footing. We study the tight-binding model with on-site disorder, on the honeycomb lattice. We find that in the weak-disorder regime, the Dirac fermions remain extended and their velocities decrease as the disorder strength is increased. However, if the disorder is strong enough, there will be a mobility edge separating localized states around the Fermi point, from the remaining extended states.
PACS: 72.15.Rn – Localization effects (Anderson or weak localization) / 72.20.Ee – Mobility edges; hopping transport / 81.05.Uw – Carbon, diamond, graphite
© EPLA, 2009
Current usage metrics show cumulative count of Article Views (full-text article views including HTML views, PDF and ePub downloads, according to the available data) and Abstracts Views on Vision4Press platform.
Data correspond to usage on the plateform after 2015. The current usage metrics is available 48-96 hours after online publication and is updated daily on week days.
Initial download of the metrics may take a while.