Volume 87, Number 3, August 2009
|Number of page(s)||5|
|Section||Condensed Matter: Electronic Structure, Electrical, Magnetic and Optical Properties|
|Published online||25 August 2009|
Anderson transition in disordered graphene
Department of Physics, Isfahan University of Technology - Isfahan 84154-83111, Iran
2 The Abdus Salam ICTP - 34100 Trieste, Italy, EU
Corresponding author: email@example.com
Accepted: 21 July 2009
We use the regularized kernel polynomial method (RKPM) to numerically study the effect disorder on a single layer of graphene. This accurate numerical method enables us to study very large lattices with millions of sites, and hence is almost free of finite-size errors. Within this approach, both weak- and strong-disorder regimes are handled on the same footing. We study the tight-binding model with on-site disorder, on the honeycomb lattice. We find that in the weak-disorder regime, the Dirac fermions remain extended and their velocities decrease as the disorder strength is increased. However, if the disorder is strong enough, there will be a mobility edge separating localized states around the Fermi point, from the remaining extended states.
PACS: 72.15.Rn – Localization effects (Anderson or weak localization) / 72.20.Ee – Mobility edges; hopping transport / 81.05.Uw – Carbon, diamond, graphite
© EPLA, 2009
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