Effects of hydrogen impurities on GeMnx semiconductors

X. L. Wang; M. Y. Ni; Z. Zeng; H. Q. Lin

doi:10.1209/0295-5075/87/47001

All issues

Volume 87 / No 4 (August 2009)

EPL, 87 4 (2009) 47001

Abstract

Issue		EPL Volume 87, Number 4, August 2009


Article Number		47001
Number of page(s)		5
Section		Condensed Matter: Electronic Structure, Electrical, Magnetic and Optical Properties
DOI		https://doi.org/10.1209/0295-5075/87/47001
Published online		31 August 2009

EPL, 87 (2009) 47001

Effects of hydrogen impurities on Ge $_{1-x}$ Mn_x semiconductors

X. L. Wang¹, M. Y. Ni¹, Z. Zeng¹ and H. Q. Lin²

¹ Key Laboratory of Materials Physics, Institute of Solid State Physics, Chinese Academy of Sciences and Graduate School of the Chinese Academy of Sciences - Hefei 230031, PRC
² Department of Physics and Institute of Theoretical Physics, The Chinese University of Hong Kong Shatin, Hong Kong, China

Corresponding author: zzeng@theory.issp.ac.cn

Received: 27 February 2009
Accepted: 28 July 2009

Abstract

The structural and magnetic properties of hydrogen-doped Ge $_{1-x}$ Mn_x diluted magnetic semiconductors are investigated using a first-principles pseudopotential method. Our results show that hydrogen impurities intend to bond to Mn ions in the Mn-doped Ge system and strongly influence the magnetic properties of this system. Hydrogen impurities actually reduce the Curie temperature of this system and might be one of the reasons for the existence of paramagnetic samples of Ge $_{1-x}$ Mn_x. Alternatively, hydrogenation can provide an easy and nonvolatile way to control and pattern the ferromagnetic properties of Mn-doped Ge diluted magnetic semiconductors, which has been achieved in the Mn-doped GaAs system (Goennenwein S. T. B. et al., Phys. Rev. Lett., 92 (2004) 227202).

PACS: 75.50.Pp – Magnetic semiconductors / 71.55.Gs – II–VI semiconductors / 71.22.+i – Electronic structure of liquid metals and semiconductors and their alloys

© EPLA, 2009

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