Volume 87, Number 4, August 2009
|Number of page(s)||5|
|Section||Condensed Matter: Electronic Structure, Electrical, Magnetic and Optical Properties|
|Published online||31 August 2009|
Effects of hydrogen impurities on GeMnx semiconductors
Key Laboratory of Materials Physics, Institute of Solid State Physics, Chinese Academy of Sciences and Graduate School of the Chinese Academy of Sciences - Hefei 230031, PRC
2 Department of Physics and Institute of Theoretical Physics, The Chinese University of Hong Kong Shatin, Hong Kong, China
Corresponding author: firstname.lastname@example.org
Accepted: 28 July 2009
The structural and magnetic properties of hydrogen-doped GeMnx diluted magnetic semiconductors are investigated using a first-principles pseudopotential method. Our results show that hydrogen impurities intend to bond to Mn ions in the Mn-doped Ge system and strongly influence the magnetic properties of this system. Hydrogen impurities actually reduce the Curie temperature of this system and might be one of the reasons for the existence of paramagnetic samples of GeMnx. Alternatively, hydrogenation can provide an easy and nonvolatile way to control and pattern the ferromagnetic properties of Mn-doped Ge diluted magnetic semiconductors, which has been achieved in the Mn-doped GaAs system (Goennenwein S. T. B. et al., Phys. Rev. Lett., 92 (2004) 227202).
PACS: 75.50.Pp – Magnetic semiconductors / 71.55.Gs – II–VI semiconductors / 71.22.+i – Electronic structure of liquid metals and semiconductors and their alloys
© EPLA, 2009
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