Volume 88, Number 1, October 2009
|Number of page(s)||5|
|Section||Condensed Matter: Electronic Structure, Electrical, Magnetic and Optical Properties|
|Published online||23 October 2009|
Interaction-mediated asymmetries of the quantized Hall effect
Physics Department, Arnold Sommerfeld Center for Theoretical Physics, and Center for NanoScience, Ludwig-Maximilans-Universität - Theresienstrasse 37, 80333 Munich, Germany, EU
2 Physics Department, Faculty of Arts and Sciences, Mugla University - 48170-Kötekli, Mugla, Turkey
3 Institut für Experimentelle und Angewandte Physik, Universität Regensburg - D-93040 Regensburg, Germany, EU
Corresponding author: firstname.lastname@example.org
Accepted: 22 September 2009
Experimental and theoretical investigations on the integer quantized Hall effect in gate-defined narrow Hall bars are presented. At low electron mobility the classical (high-temperature) Hall resistance line cuts through the center of all Hall plateaus. In contrast, for our high-mobility samples the intersection point, at even filling factors ν = 2, 4, ..., is clearly shifted towards larger magnetic fields B. This asymmetry is in good agreement with predictions of the screening theory, i.e. taking Coulomb interaction into account. The observed effect is directly related to the formation of incompressible strips in the Hall bar. The spin-split plateau at ν = 1 is found to be almost symmetric regardless of the mobility. We explain this within the so-called effective g-model.
PACS: 73.43.Cd – Theory and modelling / 73.43.Fj – Novel experimental methods; measurements / 73.43.-f – Quantum Hall effects
© EPLA, 2009
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