Issue |
EPL
Volume 88, Number 5, December 2009
|
|
---|---|---|
Article Number | 57006 | |
Number of page(s) | 6 | |
Section | Condensed Matter: Electronic Structure, Electrical, Magnetic and Optical Properties | |
DOI | https://doi.org/10.1209/0295-5075/88/57006 | |
Published online | 10 December 2009 |
Evidence of fractional matching states in nanoperforated Nb thin film grown on porous silicon
1
Laboratorio Regionale SuperMat, CNR-INFM Salerno and Dipartimento di Fisica “E. R. Caianiello”, Università degli Studi di Salerno - Baronissi, (Sa) I-84081, Italy, EU
2
State University of Informatics and RadioElectronics - P. Brovka street 6, Minsk 220013, Belarus
3
NANO_MATES, Research Centre for NANOMAterials and nanoTEchnology at Salerno University, Università degli Studi di Salerno - Fisciano, (Sa) I-84084, Italy, EU
Corresponding author: attanasio@sa.infn.it
Received:
28
July
2009
Accepted:
10
November
2009
Resistive transitions have been measured on a perforated Nb thin film with a lattice of holes with period of the order of ten nanometers. Bumps in the dR/dH-vs.-H curves have been observed at the first matching field and its fractional values, ,
and
. This effect has been related to different vortex lattice configurations made available by the underlying lattice of holes.
PACS: 74.25.Fy – Transport properties (electric and thermal conductivity, thermoelectric effects, etc.) / 74.25.Qt – Vortex lattices, flux pinning, flux creep / 81.05.Rm – Porous materials; granular materials
© EPLA, 2009
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