Volume 88, Number 5, December 2009
|Number of page(s)||6|
|Section||Condensed Matter: Electronic Structure, Electrical, Magnetic and Optical Properties|
|Published online||10 December 2009|
Evidence of fractional matching states in nanoperforated Nb thin film grown on porous silicon
Laboratorio Regionale SuperMat, CNR-INFM Salerno and Dipartimento di Fisica “E. R. Caianiello”, Università degli Studi di Salerno - Baronissi, (Sa) I-84081, Italy, EU
2 State University of Informatics and RadioElectronics - P. Brovka street 6, Minsk 220013, Belarus
3 NANO_MATES, Research Centre for NANOMAterials and nanoTEchnology at Salerno University, Università degli Studi di Salerno - Fisciano, (Sa) I-84084, Italy, EU
Corresponding author: firstname.lastname@example.org
Accepted: 10 November 2009
Resistive transitions have been measured on a perforated Nb thin film with a lattice of holes with period of the order of ten nanometers. Bumps in the dR/dH-vs.-H curves have been observed at the first matching field and its fractional values, , and . This effect has been related to different vortex lattice configurations made available by the underlying lattice of holes.
PACS: 74.25.Fy – Transport properties (electric and thermal conductivity, thermoelectric effects, etc.) / 74.25.Qt – Vortex lattices, flux pinning, flux creep / 81.05.Rm – Porous materials; granular materials
© EPLA, 2009
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