Charge and spin Hall effect in graphene with magnetic impurities

¹  Department of Physics and Electronic Science, Changsha University of Science and Technology Changsha 410076, China
²  Institut für Physik, Martin-Luther-Universität Halle-Wittenberg - Heinrich-Damerow-St. 4, 06120 Halle, Germany, EU

Received: 8 October 2009
Accepted: 10 November 2009

Abstract

We point out the existence of finite charge and spin Hall conductivities of graphene in the presence of a spin orbit interaction (SOI) and localized magnetic impurities. The SOI in graphene results in different transverse forces on the two spin channels yielding the spin Hall current. The magnetic scatterers act as spin-dependent barriers, and in combination with the SOI effect lead to a charge imbalance at the boundaries. As indicated here, the charge and spin Hall effects should be observable in graphene by changing the chemical potential close to the gap.