Volume 88, Number 5, December 2009
|Number of page(s)||5|
|Section||Interdisciplinary Physics and Related Areas of Science and Technology|
|Published online||11 December 2009|
Charge and spin Hall effect in graphene with magnetic impurities
Department of Physics and Electronic Science, Changsha University of Science and Technology Changsha 410076, China
2 Institut für Physik, Martin-Luther-Universität Halle-Wittenberg - Heinrich-Damerow-St. 4, 06120 Halle, Germany, EU
Accepted: 10 November 2009
We point out the existence of finite charge and spin Hall conductivities of graphene in the presence of a spin orbit interaction (SOI) and localized magnetic impurities. The SOI in graphene results in different transverse forces on the two spin channels yielding the spin Hall current. The magnetic scatterers act as spin-dependent barriers, and in combination with the SOI effect lead to a charge imbalance at the boundaries. As indicated here, the charge and spin Hall effects should be observable in graphene by changing the chemical potential close to the gap.
PACS: 81.05.Uw – Carbon, diamond, graphite / 75.47.-m – Magnetotransport phenomena; materials for magnetotransport / 85.75.-d – Magnetoelectronics; spintronics: devices exploiting spin polarized transport or integrated magnetic fields
© EPLA, 2009
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