Volume 88, Number 5, December 2009
|Number of page(s)||6|
|Section||Condensed Matter: Electronic Structure, Electrical, Magnetic and Optical Properties|
|Published online||10 December 2009|
Resonant spin transport through a superconducting double-barrier structure
Harish-Chandra Research Institute - Chhatnag Road, Jhusi, Allahabad 211 019, India
Accepted: 10 November 2009
We study resonant transport through a superconducting double-barrier structure. At each barrier, due to the proximity effect, an incident electron can either reflect as an electron or a hole (Andreev reflection). Similarly, transport across the barrier can occur via direct tunneling as electrons as well as via the crossed Andreev channel, where a hole is transmitted. In the subgap regime, for a symmetric double-barrier system (with low transparency for each barrier), we find a new resonance (T is the transmission probability for electrons incident on the double-barrier structure) due to interference between electron and hole wave functions between the two barriers, in contrast to a normal double-barrier system which has the standard transmission resonance at . We also point out as an application that the resonant value of can produce pure spin current through the superconducting double-barrier structure.
PACS: 73.23.-b – Electronic transport in mesoscopic systems / 74.45.+c – Proximity effects; Andreev effect; SN and SNS junctions / 72.25.Ba – Spin polarized transport in metals
© EPLA, 2009
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