Volume 89, Number 5, March 2010
|Number of page(s)||5|
|Section||Condensed Matter: Electronic Structure, Electrical, Magnetic and Optical Properties|
|Published online||16 March 2010|
Spin relaxation due to random Rashba spin-orbit coupling in GaAs (110) quantum wells
Hefei National Laboratory for Physical Sciences at Microscale and Department of Physics, University of Science and Technology of China - Hefei, Anhui, 230026, China
Corresponding author: firstname.lastname@example.org
Accepted: 17 February 2010
We investigate the spin relaxation due to the random Rashba spin-orbit coupling in symmetric GaAs (110) quantum wells from the fully microscopic kinetic spin Bloch equation approach. All relevant scatterings, such as the electron-impurity, electron–longitudinal-optical-phonon, electron–acoustic-phonon, as well as electron-electron Coulomb scatterings are explicitly included. It is shown that our calculation reproduces the experimental data by Müller et al. (Phys. Rev. Lett., 101 (2008) 206601) for a reasonable choice of parameter values. We also predict that the temperature dependence of the spin relaxation time presents a peak in the case with low impurity density, which originates from the electron-electron Coulomb scattering.
PACS: 72.25.Rb – Spin relaxation and scattering / 71.10.-w – Theories and models of many-electron systems / 71.70.Ej – Spin-orbit coupling, Zeeman and Stark splitting, Jahn-Teller effect
© EPLA, 2010
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