Volume 91, Number 6, September 2010
|Number of page(s)||5|
|Section||Condensed Matter: Electronic Structure, Electrical, Magnetic and Optical Properties|
|Published online||07 October 2010|
Interaction between Mn ions and free carriers in quantum wells with asymmetrical semimagnetic barriers
Lviv Polytechnic National University - 12 Bandera St, 79013 Lviv, Ukraine
2 Physikalisches Institut der Universität Würzburg - 97074 Würzburg, Germany, EU
3 A. F. Physico-Technical Institute, Russian Academy of Sciences - 194021 St. Petersburg, Russia
Accepted: 7 September 2010
Investigations of photoluminescence (PL) in the magnetic field of quantum structures based on the ZnSe quantum well with asymmetrical ZnBeMnSe and ZnBeSe barriers reveal that the introduction of Be into semimagnetic ZnMnSe causes a decrease of the exchange integrals for conductive and valence bands as well as the forming of a complex based on Mn, degeneration of an energy level of which with the energy levels of the V band of ZnBeMnSe or ZnSe results in spin-flip electron transitions.
PACS: 78.55.Et – II-VI semiconductors / 73.21.Fg – Quantum wells / 78.20.Ls – Magneto-optical effects
© EPLA, 2010
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