Volume 92, Number 1, October 2010
|Number of page(s)||5|
|Section||Condensed Matter: Structural, Mechanical and Thermal Properties|
|Published online||22 October 2010|
Effect of pressure and stress on blistering induced by hydrogen implantation in silicon
Institut P’ UPR 3346 CNRS, Université de Poitiers, ENSMA - SP2MI, Teleport 2, bd. Curie, F-86962 Futuroscope, France, EU
Accepted: 16 September 2010
Silicon wafers have been implanted with hydrogen at high fluence and buckling structures have been observed after thermal treatments. The effects of both internal pressure and residual stresses on the blistering have been then investigated in the framework of the Föppl-von Karman theory of thin plates and the buckle profiles have been determined. The internal pressure inside the cavities resulting from the implantation conditions is finally derived with the help of the experimental profiles of the buckles.
PACS: 61.80.-x – Physical radiation effects, radiation damage / 62.20.mq – Buckling / 68.35.bg – Semiconductors
© EPLA, 2010
Current usage metrics show cumulative count of Article Views (full-text article views including HTML views, PDF and ePub downloads, according to the available data) and Abstracts Views on Vision4Press platform.
Data correspond to usage on the plateform after 2015. The current usage metrics is available 48-96 hours after online publication and is updated daily on week days.
Initial download of the metrics may take a while.