Volume 92, Number 3, November 2010
|Number of page(s)||5|
|Section||Electromagnetism, Optics, Acoustics, Heat Transfer, Classical Mechanics, and Fluid Dynamics|
|Published online||23 November 2010|
Laser-driven acceleration of protons from hydrogenated annealed silicon targets
Microtechnology Laboratory - Fondazione Bruno Kessler CMM - Via Sommarive 18, I-38050 Povo, Trento, Italy, EU
2 Institute of Physics, ASCR, v.v.i. - Prague, Czech Republic, EU
3 Interdisciplinary Laboratory for Computational Science (LISC), FBK-CMM and University of Trento Via Sommarive 18, I-38050 Povo, Trento, Italy, EU
4 Department of Materials Engineering and Industrial Technologies, University of Trento Via Mesiano 77, I-38123 Trento, Italy, EU
Accepted: 22 October 2010
This paper provides the first demonstration that an hydrogenated annealed crystalline silicon may be used as a source of protons in laser-driven acceleration experiments. We analyze and compare the proton production from two silicon targets excited by a sub-nanosecond laser. One target (treated) was hydrogenated and annealed, while the other (untreated) did not undergo these procedures. The experimental results show that for the treated target, the number of generated protons is ∼1.4×1015 sr−1 while for the other it is ∼3.6×1013 sr−1. Their maximum energy is about 2 MeV with a laser intensity three order of magnitude lower than in previous experiments. We obtain an increase of 80% in the proton kinetic energy and of 200% in the proton current as well as a large amount of Siq+ ions (1 ≤ q ≤ 14) with respect to the untreated target. A deconvolution procedure based on a Boltzmann-like distribution is applied for the analysis of time-of-flight (TOF) spectra of proton and silicon ion beams.
PACS: 41.75.Jv – Laser-driven acceleration / 52.38.Mf – Laser ablation / 52.40.Hf – Plasma-material interactions; boundary layer effects
© EPLA, 2010
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