Volume 93, Number 5, March 2011
|Number of page(s)||6|
|Section||Condensed Matter: Electronic Structure, Electrical, Magnetic and Optical Properties|
|Published online||01 March 2011|
Direct observation of Ni3+ and Ni2+ in correlated LaNiO3−δ films
School of Materials Science and Engineering, Beijing University of Aeronautics and Astronautics Beijing 100083, PRC
Accepted: 7 February 2011
The X-ray photoelectron spectroscopic deconvolution analysis is applied to quantitatively distinguish valence states of Ni and to obtain the δ value in LaNiO3−δ films on Si substrates. The mechanism of the Ni3+/Ni2+ ratio dependent transport is clarified by the combination of transport measurements and first-principle calculations. At lower Ni3+/Ni2+ ratio of 0.39, the LaNiO2.64 film exhibits semi-conductive behavior with carriers mainly being hopping polarons, while higher Ni3+/Ni2+ ratio transfers the LaNiO2.84 film to an electronic conductor. The observed reduction of the electron-phonon interaction, shortened mean free path, and increased electron-electron coupling are suggested to be correlated to high Ni3+/Ni2+ ratio.
PACS: 79.60.-i – Photoemission and photoelectron spectra / 71.20.-b – Electron density of states and band structure of crystalline solids
© EPLA, 2011
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