Volume 94, Number 1, April 2011
|Number of page(s)||1|
|Published online||28 March 2011|
Stabilizing the defect-induced dilute magnetic semiconductors: Li-doping in GaN with Ga vacancies
Condensed Matter Theory Group, Department of Physics and Astronomy, Uppsala University - Box 530, S-751 21 Uppsala, Sweden, EU
2 Laboratory for Quantum Engineering and Micro-Nano Energy Technology, Faculty of Materials, Optoelectronics and Physics, Xiangtan University - 411105, Hunan, China
3 Quantum Functional Semiconductor Research Center (QSRC), Dongguk University - 26 Phildong 3ga, Chung gu, Seoul 100-715, Korea
4 Applied Materials Physics, Department of Materials and Engineering, Royal Institute of Technology (KTH) - S-100 44 Stockholm, Sweden, EU
Accepted: 14 February 2011
Original article: Europhysics Letters (EPL), 93 (2011) 57006.
PACS: 99.10.Cd – Errata
© EPLA, 2011
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