Volume 94, Number 2, April 2011
|Number of page(s)||6|
|Section||Interdisciplinary Physics and Related Areas of Science and Technology|
|Published online||13 April 2011|
Transport properties of graphene with one-dimensional charge defects
Department of Physics and Center of, Physics, University of Minho - P-4710-057, Braga, Portugal, EU
2 Department of Physics, 2 Science Drive, 3 National University of Singapore - Singapore 117542
3 SKKU Advanced Institute of Nanotechnology (SAINT) and Center for Human Interface Nano Technology (HINT), Sungkyunkwan University - Suwon 440-746, Korea
4 Department of Chemistry, Sungkyunkwan University - Suwon 440-746, Korea
5 NanoCore, 4 Engineering Drive 3, National University of Singapore - Singapore 117576
6 Department of Physics, Boston University - 590 Commonwealth Avenue, Boston, MA 02215, USA
Accepted: 9 March 2011
We study the effect of extended charge defects in electronic transport properties of graphene. Extended defects are ubiquitous in chemically and epitaxially grown graphene samples due to internal strains associated with the lattice mismatch. We show that at low energies these defects interact quite strongly with the 2D Dirac fermions and have an important effect in the DC-conductivity of these materials.
PACS: 81.05.ue – Graphene / 72.80.Vp – Electronic transport in graphene
© EPLA, 2011
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