Volume 94, Number 4, May 2011
|Number of page(s)||6|
|Section||Condensed Matter: Electronic Structure, Electrical, Magnetic and Optical Properties|
|Published online||05 May 2011|
Antisite domains in double perovskite ferromagnets: Impact on magnetotransport and half-metallicity
Harish-Chandra Research Institute - Chhatnag Road, Jhusi, Allahabad 211019, India
Accepted: 6 April 2011
Several double perovskite materials of the form A2BB ′ O6 exhibit high ferromagnetic Tc, and significant low-field magnetoresistance. They are also a candidate source of spin-polarized electrons. The potential usefulness of these materials is, however, frustrated by mislocation of the B and B ′ ions, which do not organise themselves in the ideal alternating structure. The result is a strong dependence of physical properties on preparative conditions, reducing the magnetization and destroying the half-metallicity. We provide the first results on the impact of spatially correlated antisite disorder, as observed experimentally, on the ferromagnetic double perovskites. The antisite domains suppress magnetism and half-metallicity, as already known from studies of uncorrelated disorder, but lead to a dramatic enhancement of the low-field magnetoresistance.
PACS: 75.47.Lx – Magnetic oxides / 75.47.Gk – Colossal magnetoresistance / 75.60.Ch – Domain walls and domain structure
© EPLA, 2011
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